A06B-6130-H002

A06B-6130-H002

A06B-6130-H002上部外部FET也是一个NFET，因此每个驱动器都会为上部NFET的栅极驱动器产生一个浮动电源VFLT。上部驱动（UD）栅极输出在VFLT和SW之间摆动，SW连接到上部NFET的源（也是功率级的输出）。VFLT 需要跟随软件上的电压从地（当上部 NFET 关闭时）摆动到 VMPS 电机电源上方（上部 NFET 完全开启）。

VFLT有两种方式提供。首先，只要SW接地，电容CVFLT就会充电至VGS。当上部 NFET 关闭时，如果上部 NFET 单独用作开关，则电流流过负载。在半桥的情况下，电流流过负载或底部 NFET（打开时）。如果将上部驱动器用作独立的高边电源开关，则接地的外部负载为CVFLT提供充电路径。外部 1W 电阻将峰值充电电流限制在 CVFLT 中，CVFLT 通常是低 ESR 片式陶瓷元件。外部二极管与所示的内部二极管并联，使峰值充电电流保持在片外。

当UD栅极驱动输出变为高电平时，CVFLT电容在上部NFET的导通转换期间保持VFLT。图2所示，电荷泵产生一个高压端VBOOST，其电压略低于高于电机电源VMPS的VGS伏特。VBOOST用于在上NFET导通时间内恢复CVFLT上的电压。

A06B-6130-H002  

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