MVME167-034B

MVME167-034B

MVME167-034B

k为电流的过载倍数，Io为变频器的额定输出电流，Ic为IGBT标称电流值(连续DC)。

确定抗电流冲击能力

m√2Io≤Ic（1ms）

式中，m为硬件电流保护倍数，Io为变频器额定输出电 流，Ic(1ms)为1ms标称电流。

一般而言，模块的选取主要根据是温升，只要温升能够满足要求，载流能力可以适当放宽。

IGBT的并联

由于单只IGBT模块电流容量有限，为了提高载流能力需要对IGBT并联。 由于IGBT具有正的温度系数，温度升高时导通压降会增大，因

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此本身具有自动均流的特性，并联使用一般不会导致严重的均流问题。

MVME167-034B